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mma25312bt1 1 rf device data freescale semiconductor, inc. heterojunction bipolar transistor technology (ingap hbt) high efficiency/linearity amplifier the mma25312b is a high efficiency ingap hbt amplifier designed for use in 2400 mhz ism applications, wlan (802.11g), wimax (802.16e) and wireless broadband mesh networks. it is suitable for applications with frequencies from 2300 to 2700 mhz using simple external matching components wit ha3to5volts upply. features ? frequency: 2300--2700 mhz ? p1db: 31 dbm @ 2500 mhz ? power gain: 26 db @ 2500 mhz ? oip3: 40 dbm @ 2500 mhz ? active bias control (on--chip) ? single 3 to 5 volt supply ? single--ended power detector ? cost--effective qfn surface mount package ? in tape and reel. t1 suffix = 1,000 units, 12 mm tape width, 7 inch reel. 2300--2700 mhz, 26 db 31 dbm ingap hbt mma25312bt1 case 2131--01 qfn 3 3 plastic table 1. typical cw performance (1) characteristic symbol 2300 mhz 2500 mhz 2700 mhz unit small--signal gain (s21) g p 26 26 24.5 db input return loss (s11) irl -- 1 4 -- 1 2 -- 1 2 db output return loss (s22) orl -- 1 1 -- 1 3 -- 1 5 db power output @ 1db compression p1db 30 31 29.8 dbm 1. v cc1 =v cc2 =v bias =5vdc,t a =25 c, 50 ohm system, cw application circuit table 2. maximum ratings rating symbol value unit supply voltage v cc 6 v supply current i cc 550 ma rf input power p in 30 dbm storage temperature range t stg --65 to +150 c junction temperature (2) t j 150 c 2. for reliable operation, the j unction temperature should not exceed 150 c. table 3. thermal characteristics characteristic symbol value (3) unit thermal resistance, junction to case case temperature 91 c, v cc1 =v cc2 =v bias =5vdc r jc 92 c/w 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. freescale semiconductor technical data document number: mma25312b rev. 0, 9/2012 ? freescale semiconductor, inc., 2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. mma25312bt1 table 4. electrical characteristics (v cc1 =v cc2 =v bias = 5 vdc, 2500 mhz, t a =25 c, 50 ohm system, in freescale cw application circuit) characteristic symbol min typ max unit small--signal gain (s21) g p 24.5 26 ? db input return loss (s11) irl ? -- 1 2 ? db output return loss (s22) orl ? -- 1 3 ? db power output @ 1db compression p1db ? 31 ? dbm third order output intercept point, two--tone cw oip3 ? 40 ? dbm noise figure nf ? 3.8 ? db supply current (1) i cq 110 124 138 ma supply voltage (1) v cc ? 5 ? v table 5. esd protection characteristics test methodology class human body model (per jesd 22--a114) 2 machine model (per eia/jesd 22--a115) a charge device model (per jesd 22--c101) iv table 6. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 1 260 c 1. for reliable operation, the juncti on temperature should not exceed 150 c. figure 1. functional block diagram figure 2. pin connections v ba2 rf out rf in 19 28 37 12 11 10 456 rf out v cc1 v cc1 v ba1 v bias v cc2 n.c. n.c. pdet v ba2 rf out rf in rf out v cc1 v cc1 v ba1 v bias v cc2 bias circuit bias circuit pdet
mma25312bt1 3 rf device data freescale semiconductor, inc. figure 3. mma25312bt1 test circuit schematic ? 2500 mhz, 5 volt operation c5 rf input r1 456 3 2 1 12 11 10 7 8 9 c9 rf output bias circuit p det l2 v cc1 c2 v bias c1 r2 z1 0.140 x 0.030 microstrip z2 0.073 x 0.030 microstrip c8 detector l3 c14 v cc2 z1 c13 c11 z2 c7 table 7. mma25312bt1 test circuit component desi gnations and values ? 2500 mhz, 5 volt operation part description part number manufacturer c1, c2 1 f chip capacitors grm155r61a105ke15 murata c3, c4, c6, c10, c12, c15 components not placed c5, c9 100 pf chip capacitors grm1555c1h101ja01 murata c7 8.2 pf chip capacitor 04023j8r2bbs avx c8, c13 22 pf chip capacitors 04023j22r0bbs avx c11 1.5 pf chip capacitor 04023j1r5bbs avx c14 4.7 f chip capacitor grm188r60j475ke19d murata l2 1.2 nh chip inductor LL1608-FH1N2S toko l3 22 nh chip inductor ll1608-fh22n0s toko r1 430 ? , 1/16 w chip resistor rc0402jr-07430rl yageo r2 1.6 k ? , 1/16 w chip resistor rc0402jr-071k60l yageo r3 component not placed pcb 0.014 , r =3.7 fr408 isola note: component numbers c3, c4, c6, c10, c12, c15 and r3 are labeled on board but not placed. note: component l1 intentionally omitted.
4 rf device data freescale semiconductor, inc. mma25312bt1 figure 4. mma25312b t1 test circuit component lay out ? 2500 mhz, 5 volt operation qfn 3x3--12n c1 rf out v cc1 v dect v cc2 rev. 0 rf in c2 r3* c3* l2 c7 r1 r2 c4* c6* c5 c11 c12* c13 c10* c8 c9 l3 c14 c15* (1) v bias [board] supplies v ba1 ,v ba2 and v bias [device]. note: component numbers c3*, c4*, c6*, c10*, c12*, c15* and r3* are labeled on board but not placed. v bias (1) table 7. mma25312bt1 test circuit component desi gnations and values ? 2500 mhz, 5 volt operation part description part number manufacturer c1, c2 1 f chip capacitors grm155r61a105ke15 murata c3, c4, c6, c10, c12, c15 components not placed c5, c9 100 pf chip capacitors grm1555c1h101ja01 murata c7 8.2 pf chip capacitor 04023j8r2bbs avx c8, c13 22 pf chip capacitors 04023j22r0bbs avx c11 1.5 pf chip capacitor 04023j1r5bbs avx c14 4.7 f chip capacitor grm188r60j475ke19d murata l2 1.2 nh chip inductor LL1608-FH1N2S toko l3 22 nh chip inductor ll1608-fh22n0s toko r1 430 ? , 1/16 w chip resistor rc0402jr-07430rl yageo r2 1.6 k ? , 1/16 w chip resistor rc0402jr-071k60l yageo r3 component not placed pcb 0.014 , r =3.7 fr408 isola note: component l1 intentionally omitted. (component designations and values table repeated for reference.)
mma25312bt1 5 rf device data freescale semiconductor, inc. figure 5. mma25312bt1 test circuit schematic ? 2500 mhz, 3.3 volt operation c5 rf input r1 456 3 2 1 12 11 10 7 8 9 c9 rf output bias circuit p det l2 v cc1 c2 v bias c1 r2 z1 0.140 x 0.030 microstrip z2 0.073 x 0.030 microstrip c8 detector l3 c14 v cc2 z1 c13 c11 z2 c7 table 8. mma25312bt1 test circuit c omponent designations and value s ? 2500 mhz, 3.3 volt operation part description part number manufacturer c1, c2 1 f chip capacitors grm155r61a105ke15 murata c3, c4, c6, c10, c12, c15 components not placed c5, c9 100 pf chip capacitors grm1555c1h101ja01 murata c7 8.2 pf chip capacitor 04023j8r2bbs avx c8, c13 22 pf chip capacitors 04023j22r0bbs avx c11 1.5 pf chip capacitor 04023j1r5bbs avx c14 4.7 f chip capacitor grm188r60j475ke19d murata l2 1.2 nh chip inductor LL1608-FH1N2S toko l3 22 nh chip inductor ll1608-fh22n0s toko r1 100 ? , 1/16 w chip resistor rc0402jr-07100rl yageo r2 470 ? , 1/16 w chip resistor rc0402jr-07470rl yageo r3 component not placed pcb 0.014 , r =3.7 fr408 isola note: component numbers c3, c4, c6, c10, c12, c15 and r3 are labeled on board but not placed. note: component l1 intentionally omitted.
6 rf device data freescale semiconductor, inc. mma25312bt1 figure 6. mma25312b t1 test circuit component layout ? 2500 mhz, 3.3 volt operation qfn 3x3--12n c1 rf out v cc1 v dect v cc2 rev. 0 rf in c2 r3* c3* l2 c7 r1 r2 c4* c6* c5 c11 c12* c13 c10* c8 c9 l3 c14 c15* (1) v bias [board] supplies v ba1 ,v ba2 and v bias [device]. note: component numbers c3*, c4*, c6*, c10*, c12*, c15* and r3* are labeled on board but not placed. v bias (1) table 8. mma25312bt1 test circuit c omponent designations and value s ? 2500 mhz, 3.3 volt operation part description part number manufacturer c1, c2 1 f chip capacitors grm155r61a105ke15 murata c3, c4, c6, c10, c12, c15 components not placed c5, c9 100 pf chip capacitors grm1555c1h101ja01 murata c7 8.2 pf chip capacitor 04023j8r2bbs avx c8, c13 22 pf chip capacitors 04023j22r0bbs avx c11 1.5 pf chip capacitor 04023j1r5bbs avx c14 4.7 f chip capacitor grm188r60j475ke19d murata l2 1.2 nh chip inductor LL1608-FH1N2S toko l3 22 nh chip inductor ll1608-fh22n0s toko r1 100 ? , 1/16 w chip resistor rc0402jr-07100rl yageo r2 470 ? , 1/16 w chip resistor rc0402jr-07470rl yageo r3 component not placed pcb 0.014 , r =3.7 fr408 isola note: component l1 intentionally omitted. (component designations and values table repeated for reference.)
mma25312bt1 7 rf device data freescale semiconductor, inc. figure 7. pcb pad layout for qfn 3 3 3.00 3.40 2.00 0.50 0.30 1.6 x 1.6 solder pad with thermal via structure 0.70 figure 8. product marking ma04 ywz
8 rf device data freescale semiconductor, inc. mma25312bt1 package dimensions
mma25312bt1 9 rf device data freescale semiconductor, inc.
10 rf device data freescale semiconductor, inc. mma25312bt1
mma25312bt1 11 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers ? an3100: general purpose amplifier and mmic biasing software ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 sept. 2012 ? initial release of data sheet
12 rf device data freescale semiconductor, inc. mma25312bt1 how to reach us: home page: freescale.com web support: freescale.com/support document number: mma25312b rev. 0, 9/2012 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale, the freescale logo, altivec, c--5, codetest, codewarrior, coldfire, c--ware, energy efficient solutions logo, kinetis, mobilegt, powerquicc, processor expert, qoriq, qorivva, starcore, symphony, and vortiqa are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast, beekit, beestack, coldfire+, corenet, flexis, magniv, mxc, platform in a package, qoriq qonverge, quicc engine, ready play, safeassure, smartmos, turbolink, vybrid, and xtrinsic are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2012 freescale semiconductor, inc.

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